BSB015N04NX3GXUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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Technische Details BSB015N04NX3GXUMA1 Infineon Technologies
Description: MOSFET N-CH 40V 36A/180A 2WDSON, Packaging: Tape & Reel (TR), Package / Case: 3-WDSON, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: MG-WDSON-2, CanPAK M™, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V.
Weitere Produktangebote BSB015N04NX3GXUMA1
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BSB015N04NX3GXUMA1 | Hersteller : Infineon Technologies |
MOSFETs TRENCH <= 40V |
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BSB015N04NX3GXUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 89W Case: CanPAK™ MX; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
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