BSB019N03LX G Infineon Technologies

Description: MOSFET N-CH 30V 32A/174A 2WDSON, Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: MG-WDSON-2, CanPAK M™, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 174A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-WDSON, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 30 V.