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BSB028N06NN3GXUMA1

BSB028N06NN3GXUMA1 Infineon Technologies

BSB028N06NN3_Rev+1.4.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30432e25b009012e29fda4e23838
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 22A/90A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 4V @ 102µA
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
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Technische Details BSB028N06NN3GXUMA1 Infineon Technologies

Description: MOSFET N-CH 60V 22A/90A 2WDSON, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: MG-WDSON-2, CanPAK M™, Vgs(th) (Max) @ Id: 4V @ 102µA, Power Dissipation (Max): 2.2W (Ta), 78W (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-WDSON, Packaging: Tape & Reel (TR).

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BSB028N06NN3GXUMA1 BSB028N06NN3GXUMA1 Infineon Technologies BSB028N06NN3_Rev+1.4.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30432e25b009012e29fda4e23838 Description: MOSFET N-CH 60V 22A/90A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 4V @ 102µA
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSB028N06NN3GXUMA1 BSB028N06NN3_Rev+1.4.pdf?folderId=db3a30431441fb5d01148ca9f1be0e77&fileId=db3a30432e25b009012e29fda4e23838
BSB028N06NN3GXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 22A/90A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 4V @ 102µA
Power Dissipation (Max): 2.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH