BSB280N15NZ3GXUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 9A/30A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
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Technische Details BSB280N15NZ3GXUMA1 Infineon Technologies
Description: MOSFET N-CH 150V 9A/30A 2WDSON, Packaging: Tape & Reel (TR), Package / Case: 3-WDSON, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 4V @ 60µA, Supplier Device Package: MG-WDSON-2, CanPAK M™, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V.
Weitere Produktangebote BSB280N15NZ3GXUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BSB280N15NZ3GXUMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 9A/30A 2WDSON Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: MG-WDSON-2, CanPAK M™ Vgs(th) (Max) @ Id: 4V @ 60µA Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-WDSON Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BSB280N15NZ3GXUMA1 | Infineon Technologies |
MOSFET TRENCH >=100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BSB280N15NZ3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W Case: CanPAK™ MZ; MG-WDSON-2 Kind of channel: enhancement Technology: OptiMOS™ Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar On-state resistance: 28mΩ Gate-source voltage: ±20V Drain current: 30A Power dissipation: 57W Drain-source voltage: 150V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSB280N15NZ3GXUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 9A/30A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 4V @ 60µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 9A/30A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 4V @ 60µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSB280N15NZ3GXUMA1 |
|
Hersteller: Infineon Technologies
MOSFET TRENCH >=100V
MOSFET TRENCH >=100V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSB280N15NZ3GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Case: CanPAK™ MZ; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 28mΩ
Gate-source voltage: ±20V
Drain current: 30A
Power dissipation: 57W
Drain-source voltage: 150V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Case: CanPAK™ MZ; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 28mΩ
Gate-source voltage: ±20V
Drain current: 30A
Power dissipation: 57W
Drain-source voltage: 150V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH