Weitere Produktangebote BSC007N04LS6ATMA1 nach Preis ab 1.9 EUR bis 3.14 EUR
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BSC007N04LS6ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 40V 100A TDSON-8-6Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 188W Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 381A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC007N04LS6ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R |
auf Bestellung 8813 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC007N04LS6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 100A TDSON-8-6 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 381A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Power Dissipation (Max): 188W Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V |
auf Bestellung 6154 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC007N04LS6ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R |
auf Bestellung 635 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC007N04LS6ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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BSC007N04LS6ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSC007N04LS6ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TDSON-8-6
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 188W
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 381A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 100A TDSON-8-6
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 188W
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 381A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 1.9 EUR |
| BSC007N04LS6ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R
auf Bestellung 8813 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 63+ | 2.33 EUR |
| BSC007N04LS6ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 188W
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Description: MOSFET N-CH 40V 100A TDSON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 381A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 188W
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
auf Bestellung 6154 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.04 EUR |
| 10+ | 2.48 EUR |
| 100+ | 2.32 EUR |
| BSC007N04LS6ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R
auf Bestellung 635 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 47+ | 3.14 EUR |
| 53+ | 2.77 EUR |
| 100+ | 2.29 EUR |
| BSC007N04LS6ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC007N04LS6ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 40V 48A 8-Pin TDSON EP T/R
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)