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BSC009N04LSSCATMA1 Infineon Technologies


Infineon-BSC009N04LSSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4cadb130ebc
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 301A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
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Technische Details BSC009N04LSSCATMA1 Infineon Technologies

Description: TRENCH .

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BSC009N04LSSCATMA1 BSC009N04LSSCATMA1 Infineon Technologies Infineon-BSC009N04LSSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4cadb130ebc Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 301A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC009N04LSSCATMA1 BSC009N04LSSCATMA1 Infineon Technologies Infineon_BSC009N04LSSC_DataSheet_v02_01_EN.pdf MOSFETs TRENCH <= 40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC009N04LSSCATMA1 Infineon-BSC009N04LSSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4cadb130ebc
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 301A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC009N04LSSCATMA1 Infineon_BSC009N04LSSC_DataSheet_v02_01_EN.pdf
Hersteller: Infineon Technologies
MOSFETs TRENCH <= 40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH