auf Bestellung 5000 Stücke:
Lieferzeit 375-379 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.91 EUR |
| 10+ | 4.15 EUR |
| 100+ | 3.41 EUR |
| 500+ | 3.08 EUR |
| 1000+ | 2.82 EUR |
| 5000+ | 2.8 EUR |
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Technische Details BSC010N04LSCATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 282A, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 282A (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V.
Weitere Produktangebote BSC010N04LSCATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BSC010N04LSCATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 40V 39A T/R |
Produkt ist nicht verfügbar |
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BSC010N04LSCATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 39A 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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BSC010N04LSCATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 39A 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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BSC010N04LSCATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 282A Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 282A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V |
Produkt ist nicht verfügbar |
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BSC010N04LSCATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 282A Packaging: Cut Tape (CT) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 282A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V |
Produkt ist nicht verfügbar |