Produkte > INFINEON TECHNOLOGIES > BSC010N04LSTATMA1
BSC010N04LSTATMA1

BSC010N04LSTATMA1 Infineon Technologies


infineon-bsc010n04lst-datasheet-v02_02-en.pdf Hersteller: Infineon Technologies
BSC010N04LSTATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 40V 39A 8-Pin TDSON EP T/R - Arrow.com
auf Bestellung 5000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5000+2.12 EUR
Mindestbestellmenge: 5000
Produktrezensionen
Produktbewertung abgeben

Technische Details BSC010N04LSTATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 39A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8 FL, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V.

Weitere Produktangebote BSC010N04LSTATMA1 nach Preis ab 2.13 EUR bis 4.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BSC010N04LSTATMA1 BSC010N04LSTATMA1 Hersteller : Infineon Technologies Infineon-BSC010N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc801605455bd392c6b Description: MOSFET N-CH 40V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
auf Bestellung 3626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.38 EUR
10+ 3.68 EUR
100+ 2.98 EUR
500+ 2.65 EUR
1000+ 2.27 EUR
2000+ 2.14 EUR
Mindestbestellmenge: 5
BSC010N04LSTATMA1 BSC010N04LSTATMA1 Hersteller : Infineon Technologies Infineon_BSC010N04LST_DataSheet_v02_03_EN-3160407.pdf MOSFET TRENCH <= 40V
auf Bestellung 2461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.65 EUR
10+ 4.01 EUR
100+ 3.34 EUR
500+ 2.92 EUR
1000+ 2.5 EUR
5000+ 2.13 EUR
BSC010N04LSTATMA1 BSC010N04LSTATMA1 Hersteller : Infineon Technologies infineon-bsc010n04lst-datasheet-v02_03-en.pdf Trans MOSFET N-CH 40V 39A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSC010N04LSTATMA1 BSC010N04LSTATMA1 Hersteller : Infineon Technologies infineon-bsc010n04lst-datasheet-v02_02-en.pdf BSC010N04LSTATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 40V 39A 8-Pin TDSON EP T/R - Arrow.com
Produkt ist nicht verfügbar
BSC010N04LSTATMA1 BSC010N04LSTATMA1 Hersteller : Infineon Technologies infineon-bsc010n04lst-datasheet-v02_02-en.pdf BSC010N04LSTATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 40V 39A 8-Pin TDSON EP T/R - Arrow.com
Produkt ist nicht verfügbar
BSC010N04LSTATMA1 BSC010N04LSTATMA1 Hersteller : Infineon Technologies Infineon-BSC010N04LST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc801605455bd392c6b Description: MOSFET N-CH 40V 39A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
Produkt ist nicht verfügbar