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BSC010NE2LSIATMA1

BSC010NE2LSIATMA1 Infineon Technologies

BSC010NE2LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308d8d1cdf33de
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 38A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 12 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.96 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSC010NE2LSIATMA1 Infineon Technologies

Description: MOSFET N-CH 25V 38A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 12 V.

Weitere Produktangebote BSC010NE2LSIATMA1 nach Preis ab 1.07 EUR bis 3.56 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSC010NE2LSIATMA1 BSC010NE2LSIATMA1 Infineon Technologies Infineon_BSC010NE2LSI_DataSheet_v02_07_EN.pdf MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.43 EUR
10+2.04 EUR
100+1.53 EUR
500+1.25 EUR
1000+1.13 EUR
2500+1.11 EUR
5000+1.07 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC010NE2LSIATMA1 BSC010NE2LSIATMA1 Infineon Technologies BSC010NE2LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308d8d1cdf33de Description: MOSFET N-CH 25V 38A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 12 V
auf Bestellung 9171 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.56 EUR
10+2.28 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.14 EUR
2000+1.12 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC010NE2LSIATMA1 Infineon_BSC010NE2LSI_DataSheet_v02_07_EN.pdf
BSC010NE2LSIATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.43 EUR
10+2.04 EUR
100+1.53 EUR
500+1.25 EUR
1000+1.13 EUR
2500+1.11 EUR
5000+1.07 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC010NE2LSIATMA1 BSC010NE2LSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308d8d1cdf33de
BSC010NE2LSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 38A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 12 V
auf Bestellung 9171 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.56 EUR
10+2.28 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.14 EUR
2000+1.12 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH