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BSC011N03LSATMA1

BSC011N03LSATMA1 Infineon Technologies

BSC011N03LS_Rev+1.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbb2c20ff02a0
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 37A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.82 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSC011N03LSATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 37A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V.

Weitere Produktangebote BSC011N03LSATMA1 nach Preis ab 1 EUR bis 3.08 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSC011N03LSATMA1 BSC011N03LSATMA1 Infineon Technologies Infineon_BSC011N03LS_DataSheet_v02_05_EN-3360801.pdf MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS
auf Bestellung 21984 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.15 EUR
10+1.62 EUR
25+1.58 EUR
100+1.23 EUR
250+1.22 EUR
500+1.08 EUR
1000+1.02 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC011N03LSATMA1 BSC011N03LSATMA1 Infineon Technologies BSC011N03LS_Rev+1.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbb2c20ff02a0 Description: MOSFET N-CH 30V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
auf Bestellung 12357 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.08 EUR
10+1.96 EUR
100+1.33 EUR
500+1.06 EUR
1000+1 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC011N03LSATMA1 Infineon_BSC011N03LS_DataSheet_v02_05_EN-3360801.pdf
BSC011N03LSATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS
auf Bestellung 21984 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.15 EUR
10+1.62 EUR
25+1.58 EUR
100+1.23 EUR
250+1.22 EUR
500+1.08 EUR
1000+1.02 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC011N03LSATMA1 BSC011N03LS_Rev+1.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432c64a60d012cbb2c20ff02a0
BSC011N03LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
auf Bestellung 12357 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.08 EUR
10+1.96 EUR
100+1.33 EUR
500+1.06 EUR
1000+1 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH