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BSC012N06NSATMA1

BSC012N06NSATMA1 Infineon Technologies


Infineon_BSC012N06NS_DataSheet_v02_03_EN-3360735.pdf Hersteller: Infineon Technologies
MOSFET TRENCH 40<-<100V
auf Bestellung 27 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.32 EUR
10+ 4.47 EUR
25+ 4.29 EUR
100+ 3.63 EUR
250+ 3.59 EUR
500+ 3.2 EUR
1000+ 2.59 EUR
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Technische Details BSC012N06NSATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 100A TSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 306A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 147µA, Supplier Device Package: PG-TSON-8-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V.

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BSC012N06NSATMA1 BSC012N06NSATMA1 Hersteller : Infineon Technologies BSC012N06NS_Rev2.1_2018-12-11.pdf Description: MOSFET N-CH 60V 100A TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 306A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 4295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.35 EUR
10+ 4.49 EUR
100+ 3.63 EUR
500+ 3.23 EUR
1000+ 2.76 EUR
2000+ 2.6 EUR
Mindestbestellmenge: 4
BSC012N06NSATMA1 BSC012N06NSATMA1 Hersteller : Infineon Technologies infineon-bsc012n06ns-datasheet-v02_03-en.pdf Trans MOSFET N-CH 60V 36A 8-Pin TSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSC012N06NSATMA1 BSC012N06NSATMA1 Hersteller : Infineon Technologies BSC012N06NS_Rev2.1_2018-12-11.pdf Description: MOSFET N-CH 60V 100A TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 306A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
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