BSC012N06NSATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TSON-8
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 306A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details BSC012N06NSATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 100A TSON-8, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Part Status: Active, Supplier Device Package: PG-TSON-8-3, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs(th) (Max) @ Id: 3.3V @ 147µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 306A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSC012N06NSATMA1 nach Preis ab 2.48 EUR bis 8.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSC012N06NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 100A TSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 306A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 147µA Supplier Device Package: PG-TSON-8-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
auf Bestellung 12613 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
BSC012N06NSATMA1 | Infineon Technologies |
MOSFETs IFX FET 60V |
auf Bestellung 705 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BSC012N06NSATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 306A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: MOSFET N-CH 60V 100A TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 306A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 12613 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.71 EUR |
| 10+ | 4.58 EUR |
| 100+ | 3.23 EUR |
| 500+ | 2.65 EUR |
| 1000+ | 2.48 EUR |
| BSC012N06NSATMA1 |
![]() |
Hersteller: Infineon Technologies
MOSFETs IFX FET 60V
MOSFETs IFX FET 60V
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.13 EUR |
| 10+ | 4.96 EUR |
| 100+ | 3.92 EUR |
| 500+ | 3.7 EUR |
| 1000+ | 3.5 EUR |
| 2500+ | 3.22 EUR |


