BSC014NE2LSIATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 25V 33A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 12 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.83 EUR |
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Technische Details BSC014NE2LSIATMA1 Infineon Technologies
Description: MOSFET N-CH 25V 33A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 74W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 12 V.
Weitere Produktangebote BSC014NE2LSIATMA1 nach Preis ab 0.82 EUR bis 2.87 EUR
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BSC014NE2LSIATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 25V 33A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC014NE2LSIATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 25V 33A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC014NE2LSIATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 25V 33A 8-Pin TDSON EP T/R |
auf Bestellung 19930 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC014NE2LSIATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 33A/100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 12 V |
auf Bestellung 13973 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC014NE2LSIATMA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS |
auf Bestellung 2947 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC014NE2LSIATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 25V 33A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC014NE2LSIATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 25V 33A 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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BSC014NE2LSIATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 25V 33A 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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BSC014NE2LSIATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC014NE2LSIATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |