BSC016N03LS G Infineon Technologies
auf Bestellung 3197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.71 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.8 EUR |
| 250+ | 1.67 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.29 EUR |
| 2500+ | 1.23 EUR |
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Technische Details BSC016N03LS G Infineon Technologies
Description: BSC016N03 - 12V-300V N-CHANNEL P, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V.
Weitere Produktangebote BSC016N03LS G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BSC016N03LS G | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 30V 100A TDSON8 |
auf Bestellung 637 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSC016N03LS G | Hersteller : Infineon |
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auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| BSC016N03LSG | Hersteller : Infineon technologies |
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auf Bestellung 18 Stücke: Lieferzeit 21-28 Tag (e) |
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BSC016N03LSG | Hersteller : Infineon Technologies |
Description: BSC016N03 - 12V-300V N-CHANNEL P Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V |
Produkt ist nicht verfügbar |
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BSC016N03LS G | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 100A TDSON8 |
Produkt ist nicht verfügbar |