BSC016N03LSGATMA1 Infineon Technologies
auf Bestellung 13344 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 167+ | 0.79 EUR |
| 250+ | 0.76 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSC016N03LSGATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 32A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V.
Weitere Produktangebote BSC016N03LSGATMA1 nach Preis ab 0.69 EUR bis 2.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BSC016N03LSGATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 30V 32A 8-Pin TDSON EP T/R |
auf Bestellung 13344 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
BSC016N03LSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 32A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
BSC016N03LSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 32A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
BSC016N03LSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 32A/100A TDSON Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V |
auf Bestellung 8554 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
BSC016N03LSGATMA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
auf Bestellung 692 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
BSC016N03LSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
|
BSC016N03LSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 32A 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
BSC016N03LSGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
BSC016N03LSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 32A/100A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
BSC016N03LSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 32A/100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
BSC016N03LSGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 125W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |