Technische Details BSC016N06NSATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 30A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 139W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 95µA, Supplier Device Package: PG-TDSON-8 FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V.
Weitere Produktangebote BSC016N06NSATMA1 nach Preis ab 1.36 EUR bis 4.93 EUR
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BSC016N06NSATMA1 | Infineon Technologies |
 Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC016N06NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 30A/100A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 95µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC016N06NSATMA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R |
auf Bestellung 64000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC016N06NSATMA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R |
auf Bestellung 35403 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC016N06NSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 30A/100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 95µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V |
auf Bestellung 22633 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC016N06NSATMA1 | Infineon Technologies |
MOSFETs N-Ch 60V 100A DSON-8 OptiMOS |
auf Bestellung 30302 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC016N06NSATMA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSC016N06NSATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 1.36 EUR |
| BSC016N06NSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
Description: MOSFET N-CH 60V 30A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 1.37 EUR |
| BSC016N06NSATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R
auf Bestellung 64000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 242+ | 2.27 EUR |
| 500+ | 2.02 EUR |
| 1000+ | 1.81 EUR |
| 10000+ | 1.58 EUR |
| BSC016N06NSATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R
auf Bestellung 35403 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 242+ | 2.27 EUR |
| 500+ | 2.02 EUR |
| 1000+ | 1.81 EUR |
| 10000+ | 1.58 EUR |
| BSC016N06NSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
Description: MOSFET N-CH 60V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
auf Bestellung 22633 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.79 EUR |
| 10+ | 3.1 EUR |
| 100+ | 2.15 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.67 EUR |
| BSC016N06NSATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 100A DSON-8 OptiMOS
MOSFETs N-Ch 60V 100A DSON-8 OptiMOS
auf Bestellung 30302 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.93 EUR |
| 10+ | 3.1 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.69 EUR |
| 5000+ | 1.59 EUR |
| BSC016N06NSATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 60V 31A 8-Pin TDSON EP T/R
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)