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BSC016N06NSATMA1

BSC016N06NSATMA1 Infineon Technologies


BSC016N06NS_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135532b353c483c Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
auf Bestellung 35000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.81 EUR
Mindestbestellmenge: 5000
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Produktbewertung abgeben

Technische Details BSC016N06NSATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 30A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 139W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 95µA, Supplier Device Package: PG-TDSON-8 FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V.

Weitere Produktangebote BSC016N06NSATMA1 nach Preis ab 1.81 EUR bis 4.17 EUR

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Preis ohne MwSt
BSC016N06NSATMA1 BSC016N06NSATMA1 Hersteller : Infineon Technologies Infineon_BSC016N06NS_DataSheet_v02_05_EN-3360893.pdf MOSFET N-Ch 60V 100A DSON-8 OptiMOS
auf Bestellung 1999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.14 EUR
10+ 3.45 EUR
100+ 2.75 EUR
500+ 2.32 EUR
1000+ 1.88 EUR
5000+ 1.81 EUR
BSC016N06NSATMA1 BSC016N06NSATMA1 Hersteller : Infineon Technologies BSC016N06NS_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a3043353fdc160135532b353c483c Description: MOSFET N-CH 60V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 95µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
auf Bestellung 41748 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.17 EUR
10+ 3.47 EUR
100+ 2.76 EUR
500+ 2.33 EUR
1000+ 1.98 EUR
2000+ 1.88 EUR
Mindestbestellmenge: 5
BSC016N06NSATMA1 BSC016N06NSATMA1 Hersteller : Infineon Technologies infineon-bsc016n06ns-datasheet-v02_05-en.pdf Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R
auf Bestellung 1056 Stücke:
Lieferzeit 14-21 Tag (e)
BSC016N06NSATMA1 BSC016N06NSATMA1 Hersteller : Infineon Technologies infineon-bsc016n06ns-datasheet-v02_05-en.pdf Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
BSC016N06NSATMA1 BSC016N06NSATMA1 Hersteller : INFINEON TECHNOLOGIES BSC016N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSC016N06NSATMA1 BSC016N06NSATMA1 Hersteller : INFINEON TECHNOLOGIES BSC016N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar