BSC018NE2LSIATMA1
Produktcode: 109878
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Weitere Produktangebote BSC018NE2LSIATMA1 nach Preis ab 0.93 EUR bis 2.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BSC018NE2LSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 29A/100A TDSON Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC018NE2LSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 29A/100A TDSON Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 9250 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC018NE2LSIATMA1 | INFINEON |
Description: INFINEON - BSC018NE2LSIATMA1 - Leistungs-MOSFET, n-Kanal, 25 V, 100 A, 1500 µohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 69W Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1500µohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 4049 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSC018NE2LSIATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 29A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 29A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.93 EUR |
| BSC018NE2LSIATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 29A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 25V 29A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 9250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.38 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.28 EUR |
| 1000+ | 1.04 EUR |
| 2000+ | 0.98 EUR |
| BSC018NE2LSIATMA1 |
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Hersteller: INFINEON
Description: INFINEON - BSC018NE2LSIATMA1 - Leistungs-MOSFET, n-Kanal, 25 V, 100 A, 1500 µohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 25V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 69W
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1500µohm
SVHC: No SVHC (21-Jan-2025)
Description: INFINEON - BSC018NE2LSIATMA1 - Leistungs-MOSFET, n-Kanal, 25 V, 100 A, 1500 µohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 25V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 69W
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1500µohm
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 4049 Stücke:
Lieferzeit 14-21 Tag (e)