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BSC019N04LSATMA1

BSC019N04LSATMA1 Infineon Technologies

Infineon-BSC019N04LS-DS-v02_01-EN.pdf?fileId=db3a304342371bb001424b8aca0c6fc4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 27A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 20 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.71 EUR
10000+0.66 EUR
15000+0.64 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSC019N04LSATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 27A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 20 V.

Weitere Produktangebote BSC019N04LSATMA1 nach Preis ab 0.75 EUR bis 2.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSC019N04LSATMA1 BSC019N04LSATMA1 Infineon Technologies Infineon_BSC019N04LS_DataSheet_v02_03_EN.pdf MOSFETs IFX FET 40V
auf Bestellung 6502 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.66 EUR
10+1.71 EUR
100+1.13 EUR
500+0.93 EUR
1000+0.79 EUR
5000+0.75 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC019N04LSATMA1 BSC019N04LSATMA1 Infineon Technologies Infineon-BSC019N04LS-DS-v02_01-EN.pdf?fileId=db3a304342371bb001424b8aca0c6fc4 Description: MOSFET N-CH 40V 27A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 20 V
auf Bestellung 19151 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.75 EUR
11+1.75 EUR
100+1.17 EUR
500+0.92 EUR
1000+0.84 EUR
2000+0.78 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC019N04LSATMA1 Infineon_BSC019N04LS_DataSheet_v02_03_EN.pdf
BSC019N04LSATMA1
Hersteller: Infineon Technologies
MOSFETs IFX FET 40V
auf Bestellung 6502 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.66 EUR
10+1.71 EUR
100+1.13 EUR
500+0.93 EUR
1000+0.79 EUR
5000+0.75 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC019N04LSATMA1 Infineon-BSC019N04LS-DS-v02_01-EN.pdf?fileId=db3a304342371bb001424b8aca0c6fc4
BSC019N04LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 27A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 20 V
auf Bestellung 19151 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.75 EUR
11+1.75 EUR
100+1.17 EUR
500+0.92 EUR
1000+0.84 EUR
2000+0.78 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH