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BSC019N04LSTATMA1

BSC019N04LSTATMA1 Infineon Technologies

infineon-bsc019n04lst-datasheet-v02_03-en.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 28A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5000+1.54 EUR
Mindestbestellmenge: 5000
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Technische Details BSC019N04LSTATMA1 Infineon Technologies

Description: MOSFET N-CH 40V, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 175°C (TA), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 161A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 20 V.

Weitere Produktangebote BSC019N04LSTATMA1 nach Preis ab 1.57 EUR bis 3.57 EUR

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BSC019N04LSTATMA1 BSC019N04LSTATMA1 Hersteller : Infineon Technologies Infineon-BSC019N04LST-DataSheet-v02_03-EN.pdf?fileId=5546d462696dbf1201698038e9d0330c Description: MOSFET N-CH 40V
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.57 EUR
Mindestbestellmenge: 5000
BSC019N04LSTATMA1 BSC019N04LSTATMA1 Hersteller : Infineon Technologies Infineon-BSC019N04LST-DataSheet-v02_03-EN.pdf?fileId=5546d462696dbf1201698038e9d0330c Description: MOSFET N-CH 40V
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 161A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.57 EUR
10+ 3.2 EUR
25+ 3.02 EUR
100+ 2.58 EUR
250+ 2.42 EUR
500+ 2.12 EUR
1000+ 1.75 EUR
2500+ 1.63 EUR
Mindestbestellmenge: 5
BSC019N04LSTATMA1 BSC019N04LSTATMA1 Hersteller : Infineon Technologies infineon-bsc019n04lst-datasheet-v02_03-en.pdf Trans MOSFET N-CH 40V 28A 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
BSC019N04LSTATMA1 BSC019N04LSTATMA1 Hersteller : Infineon Technologies Infineon_BSC019N04LST_DataSheet_v02_03_EN-3360691.pdf MOSFET TRENCH <= 40V
Produkt ist nicht verfügbar