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BSC019N04LSTATMA1

BSC019N04LSTATMA1 Infineon Technologies

Infineon-BSC019N04LST-DataSheet-v02_03-EN.pdf?fileId=5546d462696dbf1201698038e9d0330c
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 161A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TA)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Vgs(th) (Max) @ Id: 2V @ 250µA
auf Bestellung 4989 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.36 EUR
11+1.72 EUR
25+1.56 EUR
100+1.39 EUR
250+1.31 EUR
500+1.26 EUR
1000+1.22 EUR
2500+1.17 EUR
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Technische Details BSC019N04LSTATMA1 Infineon Technologies

Description: MOSFET N-CH 40V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 161A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TA), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 94W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V.

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BSC019N04LSTATMA1 BSC019N04LSTATMA1 Infineon Technologies Infineon-BSC019N04LST-DataSheet-v02_03-EN.pdf?fileId=5546d462696dbf1201698038e9d0330c Description: MOSFET N-CH 40V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 161A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TA)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC019N04LSTATMA1 BSC019N04LSTATMA1 Infineon Technologies Infineon-BSC019N04LST-DataSheet-v02_03-EN.pdf MOSFETs TRENCH <= 40V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC019N04LSTATMA1 Infineon-BSC019N04LST-DataSheet-v02_03-EN.pdf?fileId=5546d462696dbf1201698038e9d0330c
BSC019N04LSTATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 161A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TA)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC019N04LSTATMA1 Infineon-BSC019N04LST-DataSheet-v02_03-EN.pdf
BSC019N04LSTATMA1
Hersteller: Infineon Technologies
MOSFETs TRENCH <= 40V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH