BSC019N04NSGATMA1 Infineon Technologies
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.75 EUR |
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Technische Details BSC019N04NSGATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 30A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 85µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V.
Weitere Produktangebote BSC019N04NSGATMA1 nach Preis ab 0.75 EUR bis 6.14 EUR
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BSC019N04NSGATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 40V 29A 8-Pin TDSON EP T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC019N04NSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 29A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC019N04NSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 29A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC019N04NSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 30A/100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 85µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V |
auf Bestellung 4996 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC019N04NSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 29A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSC019N04NSGATMA1 | Hersteller : Infineon |
Trans MOSFET N-CH 40V 29A 8-Pin TDSON EP BSC019N04NSGATMA1 TBSC019n04ns Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSC019N04NSGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
BSC019N04NSGATMA1 SMD N channel transistors |
Produkt ist nicht verfügbar |
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BSC019N04NSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 30A/100A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 85µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V |
Produkt ist nicht verfügbar |
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BSC019N04NSGATMA1 | Hersteller : Infineon Technologies |
MOSFETs TRENCH <= 40V |
Produkt ist nicht verfügbar |