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BSC020N03MSGATMA1

BSC020N03MSGATMA1 Infineon Technologies

Infineon-BSC020N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de4cd99d033e Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.77 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSC020N03MSGATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 25A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V.

Weitere Produktangebote BSC020N03MSGATMA1 nach Preis ab 0.83 EUR bis 2.83 EUR

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BSC020N03MSGATMA1 BSC020N03MSGATMA1 Hersteller : Infineon Technologies Infineon_BSC020N03MS_G_DataSheet_v02_01_EN-3360551.pdf MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS 3M
auf Bestellung 347 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.16 EUR
10+1.4 EUR
100+1.11 EUR
250+1.1 EUR
500+0.99 EUR
1000+0.83 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BSC020N03MSGATMA1 BSC020N03MSGATMA1 Hersteller : Infineon Technologies Infineon-BSC020N03MSG-DS-v02_00-en.pdf?fileId=db3a304313d846880113de4cd99d033e Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
auf Bestellung 31315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+1.8 EUR
100+1.21 EUR
500+0.96 EUR
1000+0.88 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BSC020N03MSGATMA1 BSC020N03MSGATMA1 Hersteller : Infineon Technologies infineon-bsc020n03msg-datasheet-v02_01-en.pdf Trans MOSFET N-CH 30V 25A 8-Pin TDSON EP T/R
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