BSC020N03MSGATMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.31 EUR |
| 10+ | 1.73 EUR |
| 100+ | 1.25 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.99 EUR |
| 2500+ | 0.98 EUR |
| 5000+ | 0.87 EUR |
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Technische Details BSC020N03MSGATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8-1, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 96W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN.
Weitere Produktangebote BSC020N03MSGATMA1 nach Preis ab 1.55 EUR bis 3.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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BSC020N03MSGATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 30V 25A/100A TDSONInput Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-1 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 270 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSC020N03MSGATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 25A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.62 EUR |
| 10+ | 2.3 EUR |
| 100+ | 1.55 EUR |