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BSC023N08NS5SCATMA1 Infineon Technologies


Infineon-BSC023N08NS5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4ef7ab40f0d
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 115µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
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Technische Details BSC023N08NS5SCATMA1 Infineon Technologies

Description: TRENCH 40.

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BSC023N08NS5SCATMA1 BSC023N08NS5SCATMA1 Infineon Technologies Infineon-BSC023N08NS5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4ef7ab40f0d Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 115µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC023N08NS5SCATMA1 BSC023N08NS5SCATMA1 Infineon Technologies Infineon-BSC023N08NS5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4ef7ab40f0d MOSFETs TRENCH 40<-<100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC023N08NS5SCATMA1 Infineon-BSC023N08NS5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4ef7ab40f0d
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 115µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC023N08NS5SCATMA1 Infineon-BSC023N08NS5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c83cd30810183d4ef7ab40f0d
Hersteller: Infineon Technologies
MOSFETs TRENCH 40<-<100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH