Weitere Produktangebote BSC024NE2LSATMA1 nach Preis ab 0.68 EUR bis 2.78 EUR
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BSC024NE2LSATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 25V 25A/110A TDSONInput Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-5 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC024NE2LSATMA1 | Infineon Technologies |
MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS |
auf Bestellung 3089 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC024NE2LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 25A/110A TDSON Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-5 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 12371 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC024NE2LSATMA1 | Infineon |
Trans MOSFET N-CH 25V 25A 8-Pin TDSON EP T/R BSC024NE2LSATMA1 BSC024NE2LS INFINEON TBSC024ne2ls Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| BSC024NE2LSATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 25A/110A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 25A/110A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.69 EUR |
| BSC024NE2LSATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS
MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS
auf Bestellung 3089 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.99 EUR |
| 10+ | 1.34 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.71 EUR |
| BSC024NE2LSATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 25A/110A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 25V 25A/110A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 12371 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.02 EUR |
| 14+ | 1.34 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.69 EUR |
| 2000+ | 0.68 EUR |
| BSC024NE2LSATMA1 |
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Hersteller: Infineon
Trans MOSFET N-CH 25V 25A 8-Pin TDSON EP T/R BSC024NE2LSATMA1 BSC024NE2LS INFINEON TBSC024ne2ls
Anzahl je Verpackung: 10 Stücke
Trans MOSFET N-CH 25V 25A 8-Pin TDSON EP T/R BSC024NE2LSATMA1 BSC024NE2LS INFINEON TBSC024ne2ls
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 2.78 EUR |