BSC024NE2LSATMA1 Infineon Technologies
auf Bestellung 4358 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 281+ | 0.52 EUR |
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Technische Details BSC024NE2LSATMA1 Infineon Technologies
Description: MOSFET N-CH 25V 25A/110A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 110A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 48W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V.
Weitere Produktangebote BSC024NE2LSATMA1 nach Preis ab 0.41 EUR bis 2.75 EUR
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BSC024NE2LSATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 25V 25A 8-Pin TDSON EP T/R |
auf Bestellung 4358 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC024NE2LSATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 25V 25A 8-Pin TDSON EP T/R |
auf Bestellung 4992 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC024NE2LSATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 25A/110A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC024NE2LSATMA1 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS |
auf Bestellung 3089 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC024NE2LSATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 25A/110A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 12 V |
auf Bestellung 12371 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC024NE2LSATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 25V 25A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSC024NE2LSATMA1 | Hersteller : Infineon |
Trans MOSFET N-CH 25V 25A 8-Pin TDSON EP T/R BSC024NE2LSATMA1 BSC024NE2LS INFINEON TBSC024ne2ls Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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BSC024NE2LSATMA1 Produktcode: 116188
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Transistoren > MOSFET N-CH |
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BSC024NE2LSATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 25V 25A 8-Pin TDSON EP T/R |
Produkt ist nicht verfügbar |
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BSC024NE2LSATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 25A Power dissipation: 48W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |