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BSC025N03LSGATMA1

BSC025N03LSGATMA1 Infineon Technologies

BSC025N03LS_rev1.6.pdf?fileId=db3a304412b407950112b4274ff53bff Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.89 EUR
10000+ 0.85 EUR
Mindestbestellmenge: 5000
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Technische Details BSC025N03LSGATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 25A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V.

Weitere Produktangebote BSC025N03LSGATMA1 nach Preis ab 0.89 EUR bis 2.25 EUR

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BSC025N03LSGATMA1 BSC025N03LSGATMA1 Hersteller : Infineon Technologies Infineon_BSC025N03LS_G_DataSheet_v02_00_EN-3360718.pdf MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
auf Bestellung 5000 Stücke:
Lieferzeit 233-237 Tag (e)
Anzahl Preis ohne MwSt
2+2.25 EUR
10+ 1.87 EUR
100+ 1.44 EUR
500+ 1.22 EUR
1000+ 0.96 EUR
2500+ 0.94 EUR
5000+ 0.89 EUR
Mindestbestellmenge: 2
BSC025N03LSGATMA1 BSC025N03LSGATMA1 Hersteller : Infineon Technologies BSC025N03LS_rev1.6.pdf?fileId=db3a304412b407950112b4274ff53bff Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
auf Bestellung 38848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.25 EUR
10+ 1.84 EUR
100+ 1.43 EUR
500+ 1.22 EUR
1000+ 0.99 EUR
2000+ 0.93 EUR
Mindestbestellmenge: 8
BSC025N03LSGATMA1 BSC025N03LSGATMA1 Hersteller : INFINEON BSC025N03LS_rev1.6.pdf?fileId=db3a304412b407950112b4274ff53bff Description: INFINEON - BSC025N03LSGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0021 ohm, SuperSOT, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.2V
euEccn: NLR
Verlustleistung: 83W
Anzahl der Pins: 8Pins
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0021ohm
auf Bestellung 4520 Stücke:
Lieferzeit 14-21 Tag (e)
BSC025N03LSGATMA1 BSC025N03LSGATMA1 Hersteller : Infineon Technologies infineon-bsc025n03lsg-datasheet-v02_00-en.pdf Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
BSC025N03LSGATMA1 BSC025N03LSGATMA1 Hersteller : INFINEON TECHNOLOGIES BSC025N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSC025N03LSGATMA1 BSC025N03LSGATMA1 Hersteller : INFINEON TECHNOLOGIES BSC025N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar