BSC026NE2LS5ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 25V 24A/82A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 12 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.91 EUR |
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Technische Details BSC026NE2LS5ATMA1 Infineon Technologies
Description: MOSFET N-CH 25V 24A/82A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 82A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 29W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 12 V.
Weitere Produktangebote BSC026NE2LS5ATMA1 nach Preis ab 0.96 EUR bis 2.75 EUR
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BSC026NE2LS5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 25V 24A/82A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 82A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 12 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC026NE2LS5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 66A; 29W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 29W On-state resistance: 2.6mΩ Type of transistor: N-MOSFET Technology: OptiMOS™ Drain current: 66A Drain-source voltage: 25V Kind of channel: enhanced Gate-source voltage: ±16V Polarisation: unipolar Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC026NE2LS5ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 66A; 29W; PG-TDSON-8 Mounting: SMD Case: PG-TDSON-8 Power dissipation: 29W On-state resistance: 2.6mΩ Type of transistor: N-MOSFET Technology: OptiMOS™ Drain current: 66A Drain-source voltage: 25V Kind of channel: enhanced Gate-source voltage: ±16V Polarisation: unipolar |
Produkt ist nicht verfügbar |