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BSC027N04LSGATMA1

BSC027N04LSGATMA1 Infineon Technologies

BSC027N04LSG_rev1.04.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c4323646080c
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 49µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.59 EUR
10000+0.55 EUR
15000+0.53 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSC027N04LSGATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 24A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2V @ 49µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V.

Weitere Produktangebote BSC027N04LSGATMA1 nach Preis ab 0.55 EUR bis 2.36 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSC027N04LSGATMA1 BSC027N04LSGATMA1 Infineon Technologies Infineon-BSC027N04LS G-DataSheet-v02_00-EN.pdf MOSFETs N-Ch 40V 100A TDSON-8 OptiMOS 3
auf Bestellung 25015 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.78 EUR
10+1.21 EUR
100+0.92 EUR
500+0.73 EUR
1000+0.64 EUR
2500+0.63 EUR
5000+0.55 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC027N04LSGATMA1 BSC027N04LSGATMA1 Infineon Technologies BSC027N04LSG_rev1.04.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c4323646080c Description: MOSFET N-CH 40V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 49µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
auf Bestellung 24174 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.36 EUR
12+1.49 EUR
100+0.99 EUR
500+0.78 EUR
1000+0.71 EUR
2000+0.65 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC027N04LSGATMA1 Infineon-BSC027N04LS G-DataSheet-v02_00-EN.pdf
BSC027N04LSGATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 40V 100A TDSON-8 OptiMOS 3
auf Bestellung 25015 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.78 EUR
10+1.21 EUR
100+0.92 EUR
500+0.73 EUR
1000+0.64 EUR
2500+0.63 EUR
5000+0.55 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC027N04LSGATMA1 BSC027N04LSG_rev1.04.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c4323646080c
BSC027N04LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 49µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
auf Bestellung 24174 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.36 EUR
12+1.49 EUR
100+0.99 EUR
500+0.78 EUR
1000+0.71 EUR
2000+0.65 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH