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BSC028N06NSATMA1

BSC028N06NSATMA1 Infineon Technologies

BSC028N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d221bd62f9 Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.9 EUR
Mindestbestellmenge: 5000
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Technische Details BSC028N06NSATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 23A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 50µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V.

Weitere Produktangebote BSC028N06NSATMA1 nach Preis ab 1.72 EUR bis 4.38 EUR

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BSC028N06NSATMA1 BSC028N06NSATMA1 Hersteller : INFINEON TECHNOLOGIES BSC028N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4647 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
29+2.49 EUR
33+ 2.2 EUR
40+ 1.82 EUR
42+ 1.72 EUR
Mindestbestellmenge: 29
BSC028N06NSATMA1 BSC028N06NSATMA1 Hersteller : INFINEON TECHNOLOGIES BSC028N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 2.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 83W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TDSON-8
auf Bestellung 4647 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
29+2.49 EUR
33+ 2.2 EUR
40+ 1.82 EUR
42+ 1.72 EUR
Mindestbestellmenge: 29
BSC028N06NSATMA1 BSC028N06NSATMA1 Hersteller : Infineon Technologies Infineon_BSC028N06NS_DataSheet_v02_05_EN-3360863.pdf MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
auf Bestellung 326 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.35 EUR
10+ 3.75 EUR
100+ 3.01 EUR
250+ 2.94 EUR
500+ 2.52 EUR
1000+ 1.99 EUR
5000+ 1.9 EUR
BSC028N06NSATMA1 BSC028N06NSATMA1 Hersteller : Infineon Technologies BSC028N06NS_Rev2.0.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a3043345a30bc013465d221bd62f9 Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
auf Bestellung 26162 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.38 EUR
10+ 3.63 EUR
100+ 2.89 EUR
500+ 2.45 EUR
1000+ 2.08 EUR
2000+ 1.97 EUR
Mindestbestellmenge: 5
BSC028N06NSATMA1 BSC028N06NSATMA1 Hersteller : Infineon Technologies bsc028n06ns_rev2.1.pdf Trans MOSFET N-CH 60V 100A Automotive 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSC028N06NSATMA1 BSC028N06NSATMA1 Hersteller : Infineon Technologies bsc028n06ns_rev2.1.pdf Trans MOSFET N-CH 60V 100A Automotive 8-Pin TDSON EP T/R
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