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BSC028N06NSTATMA1

BSC028N06NSTATMA1 Infineon Technologies


Infineon-BSC028N06NST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e6c1d2cbb Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
auf Bestellung 15000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.85 EUR
Mindestbestellmenge: 5000
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Technische Details BSC028N06NSTATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 24A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 50µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V.

Weitere Produktangebote BSC028N06NSTATMA1 nach Preis ab 1.88 EUR bis 4.28 EUR

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BSC028N06NSTATMA1 BSC028N06NSTATMA1 Hersteller : Infineon Technologies Infineon_BSC028N06NST_DataSheet_v02_04_EN-3360711.pdf MOSFET TRENCH 40<-<100V
auf Bestellung 36651 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.24 EUR
10+ 3.52 EUR
100+ 2.82 EUR
250+ 2.69 EUR
500+ 2.43 EUR
1000+ 1.97 EUR
5000+ 1.88 EUR
BSC028N06NSTATMA1 BSC028N06NSTATMA1 Hersteller : Infineon Technologies Infineon-BSC028N06NST-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546e6c1d2cbb Description: MOSFET N-CH 60V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
auf Bestellung 15835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.28 EUR
10+ 3.54 EUR
100+ 2.82 EUR
500+ 2.39 EUR
1000+ 2.02 EUR
2000+ 1.92 EUR
Mindestbestellmenge: 5
BSC028N06NSTATMA1 BSC028N06NSTATMA1 Hersteller : Infineon Technologies infineon-bsc028n06nst-datasheet-v02_04-en.pdf Trans MOSFET N-CH 60V 24A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSC028N06NSTATMA1 BSC028N06NSTATMA1 Hersteller : Infineon Technologies infineon-bsc028n06nst-datasheet-v02_04-en.pdf Trans MOSFET N-CH 60V 24A 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar
BSC028N06NSTATMA1 BSC028N06NSTATMA1 Hersteller : Infineon Technologies infineon-bsc028n06nst-datasheet-v02_04-en.pdf Trans MOSFET N-CH 60V 24A 8-Pin TDSON EP T/R
Produkt ist nicht verfügbar