BSC0302LSATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 12A/99A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Produktrezensionen
Produktbewertung abgeben
Technische Details BSC0302LSATMA1 Infineon Technologies
Description: MOSFET N-CH 120V 12A/99A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 112µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V.
Weitere Produktangebote BSC0302LSATMA1 nach Preis ab 1.41 EUR bis 4.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSC0302LSATMA1 | Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 2913 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
BSC0302LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 12A/99A TDSONPart Status: Active Supplier Device Package: PG-TDSON-8-7 Vgs(th) (Max) @ Id: 2.4V @ 112µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 7100 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BSC0302LSATMA1 |
![]() |
Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
MOSFETs TRENCH >=100V
auf Bestellung 2913 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.01 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.55 EUR |
| BSC0302LSATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 12A/99A TDSON
Part Status: Active
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 120V 12A/99A TDSON
Part Status: Active
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 7100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.54 EUR |
| 10+ | 2.94 EUR |
| 100+ | 2.03 EUR |
| 500+ | 1.64 EUR |
| 1000+ | 1.51 EUR |
| 2000+ | 1.41 EUR |


