BSC031N06NS3GATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 60V 100A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 1.64 EUR |
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Technische Details BSC031N06NS3GATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8-1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 139W (Tc), Vgs(th) (Max) @ Id: 4V @ 93µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V.
Weitere Produktangebote BSC031N06NS3GATMA1 nach Preis ab 1.7 EUR bis 3.78 EUR
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BSC031N06NS3GATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 100A TDSON-8-1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 93µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
auf Bestellung 5201 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC031N06NS3GATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R |
auf Bestellung 3292 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC031N06NS3GATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R |
auf Bestellung 80000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC031N06NS3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC031N06NS3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 139W; PG-TDSON-8 Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |