BSC032N04LSATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 21A/98A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
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Technische Details BSC032N04LSATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 21A/98A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V.
Weitere Produktangebote BSC032N04LSATMA1 nach Preis ab 0.57 EUR bis 2.36 EUR
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BSC032N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ Case: PG-TDSON-8 On-state resistance: 3.2mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 83A Power dissipation: 52W Polarisation: unipolar |
auf Bestellung 1134 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC032N04LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 21A/98A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
auf Bestellung 7825 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC032N04LSATMA1 | Infineon Technologies |
MOSFETs IFX FET 40V |
auf Bestellung 8620 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSC032N04LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: PG-TDSON-8
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 52W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: PG-TDSON-8
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 52W
Polarisation: unipolar
auf Bestellung 1134 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 60+ | 1.2 EUR |
| 69+ | 1.04 EUR |
| 79+ | 0.92 EUR |
| BSC032N04LSATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 21A/98A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Description: MOSFET N-CH 40V 21A/98A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
auf Bestellung 7825 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.24 EUR |
| 13+ | 1.42 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.67 EUR |
| 2000+ | 0.61 EUR |
| BSC032N04LSATMA1 |
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Hersteller: Infineon Technologies
MOSFETs IFX FET 40V
MOSFETs IFX FET 40V
auf Bestellung 8620 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.36 EUR |
| 10+ | 1.42 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.69 EUR |
| 2500+ | 0.62 EUR |
| 5000+ | 0.57 EUR |