BSC036NE7NS3GATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 75V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 37.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 2.44 EUR |
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Technische Details BSC036NE7NS3GATMA1 Infineon Technologies
Description: MOSFET N-CH 75V 100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 110µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 37.5 V.
Weitere Produktangebote BSC036NE7NS3GATMA1 nach Preis ab 2.54 EUR bis 5.21 EUR
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BSC036NE7NS3GATMA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 75V 100A TDSON-8 |
auf Bestellung 9797 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC036NE7NS3GATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 75V 100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 110µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 37.5 V |
auf Bestellung 9315 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC036NE7NS3GATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 75V 20A Automotive 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC036NE7NS3GATMA1 Produktcode: 185447 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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BSC036NE7NS3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 156W; PG-TDSON-8 Drain-source voltage: 75V Drain current: 100A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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BSC036NE7NS3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 100A; 156W; PG-TDSON-8 Drain-source voltage: 75V Drain current: 100A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |