Weitere Produktangebote BSC036NE7NS3GATMA1 nach Preis ab 1.71 EUR bis 5.03 EUR
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BSC036NE7NS3GATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 75V 100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 110µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 37.5 V |
auf Bestellung 196 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC036NE7NS3GATMA1 | Infineon Technologies |
MOSFETs N-Ch 75V 100A TDSON-8 |
auf Bestellung 1275 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSC036NE7NS3GATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 37.5 V
Description: MOSFET N-CH 75V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 37.5 V
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.73 EUR |
| 10+ | 3.06 EUR |
| 100+ | 2.12 EUR |
| BSC036NE7NS3GATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 75V 100A TDSON-8
MOSFETs N-Ch 75V 100A TDSON-8
auf Bestellung 1275 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.03 EUR |
| 10+ | 3.1 EUR |
| 100+ | 2.34 EUR |
| 500+ | 1.97 EUR |
| 1000+ | 1.81 EUR |
| 2500+ | 1.71 EUR |