| Anzahl | Preis |
|---|---|
| 1+ | 4.29 EUR |
| 10+ | 3.57 EUR |
| 100+ | 2.85 EUR |
| 250+ | 2.62 EUR |
| 500+ | 2.39 EUR |
| 1000+ | 2.08 EUR |
| 5000+ | 1.87 EUR |
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Technische Details BSC037N08NS5TATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 22A/100A TDSON, Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TDSON-8-7, Vgs(th) (Max) @ Id: 3.8V @ 72µA, Power Dissipation (Max): 3W (Ta), 136W (Tc).
Weitere Produktangebote BSC037N08NS5TATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BSC037N08NS5TATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 80V 22A/100A TDSONRds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8-7 Vgs(th) (Max) @ Id: 3.8V @ 72µA Power Dissipation (Max): 3W (Ta), 136W (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BSC037N08NS5TATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 22A/100A TDSON Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8-7 Vgs(th) (Max) @ Id: 3.8V @ 72µA Power Dissipation (Max): 3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSC037N08NS5TATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 22A/100A TDSON
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Description: MOSFET N-CH 80V 22A/100A TDSON
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC037N08NS5TATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 22A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 80V 22A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH