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BSC039N06NSATMA1

BSC039N06NSATMA1 Infineon Technologies

BSC039N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c3adce949c7
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 19A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1 EUR
10000+0.96 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSC039N06NSATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 19A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 36µA, Supplier Device Package: PG-TDSON-8-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V.

Weitere Produktangebote BSC039N06NSATMA1 nach Preis ab 1.01 EUR bis 3.7 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSC039N06NSATMA1 BSC039N06NSATMA1 Infineon Technologies Infineon_BSC039N06NS_DataSheet_v02_05_EN-3360752.pdf MOSFETs N-Ch 60V 100A TDSON-8
auf Bestellung 2273 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.52 EUR
10+2.24 EUR
100+1.53 EUR
500+1.28 EUR
1000+1.12 EUR
2500+1.04 EUR
5000+1.01 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC039N06NSATMA1 BSC039N06NSATMA1 Infineon Technologies BSC039N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c3adce949c7 Description: MOSFET N-CH 60V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 64875 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.7 EUR
10+2.37 EUR
100+1.61 EUR
500+1.29 EUR
1000+1.18 EUR
2000+1.17 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC039N06NSATMA1 Infineon_BSC039N06NS_DataSheet_v02_05_EN-3360752.pdf
BSC039N06NSATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 100A TDSON-8
auf Bestellung 2273 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.52 EUR
10+2.24 EUR
100+1.53 EUR
500+1.28 EUR
1000+1.12 EUR
2500+1.04 EUR
5000+1.01 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC039N06NSATMA1 BSC039N06NS_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372c3adce949c7
BSC039N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 19A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 36µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 64875 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.7 EUR
10+2.37 EUR
100+1.61 EUR
500+1.29 EUR
1000+1.18 EUR
2000+1.17 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH