| Anzahl | Preis |
|---|---|
| 1+ | 5.4 EUR |
| 10+ | 3.85 EUR |
| 25+ | 3.47 EUR |
| 100+ | 2.96 EUR |
| 250+ | 2.71 EUR |
| 500+ | 2.55 EUR |
| 1000+ | 2.32 EUR |
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Technische Details BSC0402NSATMA1 Infineon Technologies
Description: MOSFET N-CH 150V 80A TDSON-8, Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8-7, Vgs(th) (Max) @ Id: 4.6V @ 107µA, Power Dissipation (Max): 139W (Tc).
Weitere Produktangebote BSC0402NSATMA1 nach Preis ab 2.2 EUR bis 6.35 EUR
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BSC0402NSATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 150V 80A TDSON-8Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-7 Vgs(th) (Max) @ Id: 4.6V @ 107µA Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10 Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 4848 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSC0402NSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 80A TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 80A TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4848 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.35 EUR |
| 10+ | 4.17 EUR |
| 100+ | 2.92 EUR |
| 500+ | 2.39 EUR |
| 1000+ | 2.22 EUR |
| 2000+ | 2.2 EUR |