Technische Details BSC042N03S G INF
Description: MOSFET N-CH 30V 20A/95A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 95A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V, Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 2V @ 50µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V.
Weitere Produktangebote BSC042N03S G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BSC042N03SG | Hersteller : INFINEON | 06+ |
auf Bestellung 562 Stücke: Lieferzeit 21-28 Tag (e) |
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| BSC042N03SG | Hersteller : INFINEON | 06+NOP |
auf Bestellung 562 Stücke: Lieferzeit 21-28 Tag (e) |
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| BSC042N03SG | Hersteller : INFINEON | 09+ |
auf Bestellung 595 Stücke: Lieferzeit 21-28 Tag (e) |
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| BSC042N03SG | Hersteller : INFINEON | 1005+ TDSON-8 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| BSC042N03SG | Hersteller : infineon | TDSON-8 |
auf Bestellung 11994 Stücke: Lieferzeit 21-28 Tag (e) |
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BSC042N03S G | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 30V 20A 8-Pin TDSON EP |
Produkt ist nicht verfügbar |
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BSC042N03S G | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 20A/95A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 95A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TDSON-8-5 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V |
Produkt ist nicht verfügbar |
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BSC042N03S G | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 20A/95A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 95A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-TDSON-8-5 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V |
Produkt ist nicht verfügbar |