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BSC047N08NS3GATMA1

BSC047N08NS3GATMA1 Infineon Technologies

BSC047N08NS3G_rev2.4.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a30431add1d95011ae7e8dacf5611
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 18A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 40 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.57 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSC047N08NS3GATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 18A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 40 V.

Weitere Produktangebote BSC047N08NS3GATMA1 nach Preis ab 1.8 EUR bis 5.32 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSC047N08NS3GATMA1 BSC047N08NS3GATMA1 Infineon Technologies Infineon_BSC047N08NS3_G_DataSheet_v02_08_EN.pdf MOSFETs N-Ch 80V 100A TDSON-8 OptiMOS 3
auf Bestellung 3540 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.96 EUR
10+3.29 EUR
100+2.32 EUR
500+1.95 EUR
1000+1.92 EUR
2500+1.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC047N08NS3GATMA1 BSC047N08NS3GATMA1 Infineon Technologies BSC047N08NS3G_rev2.4.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a30431add1d95011ae7e8dacf5611 Description: MOSFET N-CH 80V 18A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 40 V
auf Bestellung 10817 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.32 EUR
10+3.46 EUR
100+2.4 EUR
500+1.95 EUR
1000+1.92 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC047N08NS3GATMA1 Infineon_BSC047N08NS3_G_DataSheet_v02_08_EN.pdf
BSC047N08NS3GATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 80V 100A TDSON-8 OptiMOS 3
auf Bestellung 3540 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+4.96 EUR
10+3.29 EUR
100+2.32 EUR
500+1.95 EUR
1000+1.92 EUR
2500+1.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC047N08NS3GATMA1 BSC047N08NS3G_rev2.4.pdf?folderId=db3a304313b8b5a60113cee7c66a02d6&fileId=db3a30431add1d95011ae7e8dacf5611
BSC047N08NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 18A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 40 V
auf Bestellung 10817 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.32 EUR
10+3.46 EUR
100+2.4 EUR
500+1.95 EUR
1000+1.92 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH