Produkte > INFINEON TECHNOLOGIES > BSC0502NSIATMA1
BSC0502NSIATMA1

BSC0502NSIATMA1 Infineon Technologies

Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.82 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BSC0502NSIATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 26A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V.

Weitere Produktangebote BSC0502NSIATMA1 nach Preis ab 0.65 EUR bis 3.08 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSC0502NSIATMA1 BSC0502NSIATMA1 Infineon Technologies Infineon_BSC0502NSI_DataSheet_v02_01_EN.pdf MOSFETs IFX FET 15V-30V
auf Bestellung 9948 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.52 EUR
10+1.42 EUR
100+1 EUR
500+0.83 EUR
1000+0.71 EUR
2500+0.7 EUR
5000+0.65 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC0502NSIATMA1 BSC0502NSIATMA1 Infineon Technologies Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
auf Bestellung 23737 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.08 EUR
10+1.96 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.96 EUR
2000+0.88 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC0502NSIATMA1 Infineon_BSC0502NSI_DataSheet_v02_01_EN.pdf
BSC0502NSIATMA1
Hersteller: Infineon Technologies
MOSFETs IFX FET 15V-30V
auf Bestellung 9948 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.52 EUR
10+1.42 EUR
100+1 EUR
500+0.83 EUR
1000+0.71 EUR
2500+0.7 EUR
5000+0.65 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC0502NSIATMA1 Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a
BSC0502NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 26A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
auf Bestellung 23737 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.08 EUR
10+1.96 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.96 EUR
2000+0.88 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH