auf Bestellung 27838 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.66 EUR |
| 10+ | 3.2 EUR |
| 25+ | 3.19 EUR |
| 100+ | 2.73 EUR |
| 250+ | 2.71 EUR |
| 500+ | 2.52 EUR |
| 1000+ | 2.36 EUR |
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Technische Details BSC050N10NS5ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 16A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V, Power Dissipation (Max): 3W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 72µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V.
Weitere Produktangebote BSC050N10NS5ATMA1 nach Preis ab 2.38 EUR bis 4.88 EUR
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BSC050N10NS5ATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 100V 16A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 72µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V |
auf Bestellung 3550 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC050N10NS5ATMA1 | Hersteller : INFINEON |
Description: INFINEON - BSC050N10NS5ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 0.0043 ohm, TDSON, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TDSON Anzahl der Pins: 8Pins Produktpalette: OptiMOS 5 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0043ohm |
auf Bestellung 7637 Stücke: Lieferzeit 14-21 Tag (e) |
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| BSC050N10NS5ATMA1 | Hersteller : Infineon |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| BSC050N10NS5ATMA1 | Hersteller : Infineon Technologies |
OptiMOS-5Power-Transistor, 100V |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC050N10NS5ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 16A/100A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 72µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V |
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