Weitere Produktangebote BSC050NE2LSATMA1 nach Preis ab 0.36 EUR bis 1.65 EUR
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BSC050NE2LSATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 25V 39A/58A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 12 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC050NE2LSATMA1 | Infineon Technologies |
MOSFETs N-Ch 25V 58A TDSON-8 OptiMOS |
auf Bestellung 5267 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC050NE2LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 39A/58A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 12 V |
auf Bestellung 17852 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSC050NE2LSATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 39A/58A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 12 V
Description: MOSFET N-CH 25V 39A/58A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 12 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.4 EUR |
| 10000+ | 0.37 EUR |
| 15000+ | 0.36 EUR |
| BSC050NE2LSATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs N-Ch 25V 58A TDSON-8 OptiMOS
MOSFETs N-Ch 25V 58A TDSON-8 OptiMOS
auf Bestellung 5267 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.9 EUR |
| 10+ | 0.79 EUR |
| 25+ | 0.76 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.45 EUR |
| 5000+ | 0.37 EUR |
| BSC050NE2LSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 39A/58A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 12 V
Description: MOSFET N-CH 25V 39A/58A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 12 V
auf Bestellung 17852 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.65 EUR |
| 18+ | 1.03 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.47 EUR |
| 2000+ | 0.43 EUR |