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BSC057N03LSGATMA1

BSC057N03LSGATMA1 Infineon Technologies

Infineon-BSC057N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4274af23bf7 Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17A/71A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.54 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSC057N03LSGATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 17A/71A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 45W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V.

Weitere Produktangebote BSC057N03LSGATMA1 nach Preis ab 0.55 EUR bis 1.51 EUR

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BSC057N03LSGATMA1 BSC057N03LSGATMA1 Hersteller : Infineon Technologies Infineon-BSC057N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4274af23bf7 Description: MOSFET N-CH 30V 17A/71A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 5308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.50 EUR
14+1.30 EUR
100+0.90 EUR
500+0.75 EUR
1000+0.64 EUR
2000+0.57 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
BSC057N03LSGATMA1 BSC057N03LSGATMA1 Hersteller : Infineon Technologies Infineon_BSC057N03LS_DS_v02_01_en-1226355.pdf MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3
auf Bestellung 3999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.51 EUR
10+1.34 EUR
100+0.91 EUR
500+0.76 EUR
1000+0.65 EUR
2500+0.59 EUR
5000+0.55 EUR
Mindestbestellmenge: 2
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BSC057N03LSGATMA1 BSC057N03LSGATMA1 Hersteller : Infineon Technologies 3635bsc057n03ls_rev1.4.pdffolderiddb3a304412b407950112b408e8c90004fil.pdf Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
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BSC057N03LSGATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-BSC057N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4274af23bf7 BSC057N03LSGATMA1 SMD N channel transistors
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