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BSC065N06LS5ATMA1

BSC065N06LS5ATMA1 Infineon Technologies


Infineon-BSC065N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5a9ad087b39 Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 64A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.97 EUR
10000+ 0.92 EUR
Mindestbestellmenge: 5000
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Technische Details BSC065N06LS5ATMA1 Infineon Technologies

Description: MOSFET N-CHANNEL 60V 64A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 20µA, Supplier Device Package: PG-TDSON-8-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V.

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BSC065N06LS5ATMA1 BSC065N06LS5ATMA1 Hersteller : Infineon Technologies Infineon-BSC065N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5a9ad087b39 Description: MOSFET N-CHANNEL 60V 64A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
auf Bestellung 12739 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.46 EUR
10+ 2.01 EUR
100+ 1.56 EUR
500+ 1.32 EUR
1000+ 1.08 EUR
2000+ 1.02 EUR
Mindestbestellmenge: 8
BSC065N06LS5ATMA1 BSC065N06LS5ATMA1 Hersteller : Infineon Technologies Infineon_BSC065N06LS5_DataSheet_v02_01_EN-3360692.pdf MOSFET DIFFERENTIATED MOSFETS
auf Bestellung 103621 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.61 EUR
20+ 2.73 EUR
100+ 2.22 EUR
500+ 1.94 EUR
1000+ 1.49 EUR
5000+ 1.41 EUR
Mindestbestellmenge: 15
BSC065N06LS5ATMA1 BSC065N06LS5ATMA1 Hersteller : Infineon Technologies infineon-bsc065n06ls5-datasheet-v02_01-en.pdf Trans MOSFET N-CH 60V 15A 8-Pin TDSON EP T/R
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