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BSC070N10LS5ATMA1

BSC070N10LS5ATMA1 Infineon Technologies

Infineon_BSC070N10LS5_DataSheet_v02_02_EN-3360605.pdf Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
auf Bestellung 7606 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.96 EUR
10+2.04 EUR
100+1.78 EUR
250+1.61 EUR
500+1.52 EUR
1000+1.43 EUR
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Technische Details BSC070N10LS5ATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 14A/79A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V, Power Dissipation (Max): 2.5W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 49µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V.

Weitere Produktangebote BSC070N10LS5ATMA1 nach Preis ab 1.44 EUR bis 2.97 EUR

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BSC070N10LS5ATMA1 BSC070N10LS5ATMA1 Hersteller : Infineon Technologies Infineon-BSC070N10LS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626bb628d7016bdc41b1c2214d Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
auf Bestellung 3992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+2.28 EUR
25+2.05 EUR
100+1.78 EUR
250+1.63 EUR
500+1.53 EUR
1000+1.44 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BSC070N10LS5ATMA1 BSC070N10LS5ATMA1 Hersteller : Infineon Technologies infineon-bsc070n10ls5-datasheet-v02_02-en.pdf Trans MOSFET N-CH 100V 14A T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BSC070N10LS5ATMA1 BSC070N10LS5ATMA1 Hersteller : Infineon Technologies Infineon-BSC070N10LS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626bb628d7016bdc41b1c2214d Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
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