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BSC076N06NS3GATMA1

BSC076N06NS3GATMA1 Infineon Technologies

BSC076N06NS3_Rev2.1.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb04d68c7fc7 Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.9 EUR
10000+ 0.85 EUR
Mindestbestellmenge: 5000
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Technische Details BSC076N06NS3GATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 50A TDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 4V @ 35µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V.

Weitere Produktangebote BSC076N06NS3GATMA1 nach Preis ab 0.89 EUR bis 2.27 EUR

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Preis ohne MwSt
BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 Hersteller : Infineon Technologies Infineon_BSC076N06NS3_G_DataSheet_v02_05_EN-3361110.pdf MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
auf Bestellung 8038 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.27 EUR
10+ 1.74 EUR
100+ 1.43 EUR
500+ 1.23 EUR
1000+ 0.95 EUR
5000+ 0.89 EUR
Mindestbestellmenge: 2
BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 Hersteller : Infineon Technologies BSC076N06NS3_Rev2.1.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb04d68c7fc7 Description: MOSFET N-CH 60V 50A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
auf Bestellung 38401 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.27 EUR
10+ 1.86 EUR
100+ 1.45 EUR
500+ 1.23 EUR
1000+ 1 EUR
2000+ 0.94 EUR
Mindestbestellmenge: 8
BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 Hersteller : INFINEON BSC076N06NS3_Rev2.1.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb04d68c7fc7 Description: INFINEON - BSC076N06NS3GATMA1 - Leistungs-MOSFET, n-Kanal, 60 V, 50 A, 0.0062 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 50A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 69W
Anzahl der Pins: 8Pins
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0062ohm
auf Bestellung 49729 Stücke:
Lieferzeit 14-21 Tag (e)
BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 Hersteller : Infineon Technologies 4955bsc076n06ns3_rev2.4.pdffolderiddb3a30431ddc9372011ebafa04517f8bfi.pdf Trans MOSFET N-CH 60V 50A 8-Pin TDSON EP T/R
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 Hersteller : INFINEON TECHNOLOGIES BSC076N06NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 Hersteller : INFINEON TECHNOLOGIES BSC076N06NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar