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BSC077N12NS3GATMA1

BSC077N12NS3GATMA1 Infineon Technologies

BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 13.4/98A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.77 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSC077N12NS3GATMA1 Infineon Technologies

Description: MOSFET N-CH 120V 13.4/98A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 4V @ 110µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V.

Weitere Produktangebote BSC077N12NS3GATMA1 nach Preis ab 1.95 EUR bis 5.98 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSC077N12NS3GATMA1 BSC077N12NS3GATMA1 Infineon Technologies Infineon-BSC077N12NS3 G-DS-v02_08-EN.pdf MOSFETs N-Ch 120V 98A TDSON-8 OptiMOS 3
auf Bestellung 6075 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.12 EUR
10+3.41 EUR
100+2.48 EUR
500+2.11 EUR
1000+2.09 EUR
2500+2.01 EUR
5000+1.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC077N12NS3GATMA1 BSC077N12NS3GATMA1 Infineon Technologies BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39 Description: MOSFET N-CH 120V 13.4/98A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V
auf Bestellung 15567 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.98 EUR
10+3.92 EUR
100+2.73 EUR
500+2.23 EUR
1000+2.17 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC077N12NS3GATMA1 Infineon-BSC077N12NS3 G-DS-v02_08-EN.pdf
BSC077N12NS3GATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 120V 98A TDSON-8 OptiMOS 3
auf Bestellung 6075 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+5.12 EUR
10+3.41 EUR
100+2.48 EUR
500+2.11 EUR
1000+2.09 EUR
2500+2.01 EUR
5000+1.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC077N12NS3GATMA1 BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39
BSC077N12NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 13.4/98A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 50A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 60 V
auf Bestellung 15567 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+5.98 EUR
10+3.92 EUR
100+2.73 EUR
500+2.23 EUR
1000+2.17 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH