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BSC079N10NSGATMA1

BSC079N10NSGATMA1 Infineon Technologies

BSC079N10NS+Rev1.03.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a601167b174f951147
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13.4A 8TDSON
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
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Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.56 EUR
10+3.13 EUR
100+2.27 EUR
500+1.89 EUR
1000+1.85 EUR
Mindestbestellmenge: 4 Stücke
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Technische Details BSC079N10NSGATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 13.4A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 110µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V.

Weitere Produktangebote BSC079N10NSGATMA1

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BSC079N10NSGATMA1 BSC079N10NSGATMA1 Infineon Technologies BSC079N10NS+Rev1.03.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a601167b174f951147 Description: MOSFET N-CH 100V 13.4A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC079N10NSGATMA1 BSC079N10NSGATMA1 Infineon Technologies Infineon_BSC079N10NS_DS_v01_06_en-3359936.pdf MOSFET TRENCH >=100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC079N10NSGATMA1 BSC079N10NS+Rev1.03.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a601167b174f951147
BSC079N10NSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13.4A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC079N10NSGATMA1 Infineon_BSC079N10NS_DS_v01_06_en-3359936.pdf
BSC079N10NSGATMA1
Hersteller: Infineon Technologies
MOSFET TRENCH >=100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH