Technische Details BSC079N10NSGATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 13.4A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 110µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V.
Weitere Produktangebote BSC079N10NSGATMA1 nach Preis ab 2.08 EUR bis 5.43 EUR
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BSC079N10NSGATMA1 | Infineon Technologies |
 Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC079N10NSGATMA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP T/R |
auf Bestellung 5716 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC079N10NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 13.4A 8TDSON Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8-1 Vgs(th) (Max) @ Id: 4V @ 110µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Vgs (Max): ±20V |
auf Bestellung 4701 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSC079N10NSGATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 2.08 EUR |
| BSC079N10NSGATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP T/R
auf Bestellung 5716 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 189+ | 3.45 EUR |
| 500+ | 3.07 EUR |
| 1000+ | 2.77 EUR |
| BSC079N10NSGATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13.4A 8TDSON
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Description: MOSFET N-CH 100V 13.4A 8TDSON
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
auf Bestellung 4701 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.43 EUR |
| 10+ | 3.72 EUR |
| 100+ | 2.7 EUR |
| 500+ | 2.25 EUR |
| 1000+ | 2.2 EUR |