BSC079N10NSGATMA1 Infineon Technologies
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 1.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSC079N10NSGATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 13.4A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 110µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V.
Weitere Produktangebote BSC079N10NSGATMA1 nach Preis ab 1.69 EUR bis 4.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BSC079N10NSGATMA1 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
BSC079N10NSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP T/R |
auf Bestellung 5716 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
BSC079N10NSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 13.4A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: PG-TDSON-8-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V |
auf Bestellung 4701 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
BSC079N10NSGATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 13.4A Automotive 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
| BSC079N10NSGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
|
|
BSC079N10NSGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 13.4A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: PG-TDSON-8-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V |
Produkt ist nicht verfügbar |
|||||||||||||
 |
BSC079N10NSGATMA1 | Hersteller : Infineon Technologies |
MOSFET TRENCH >=100V |
Produkt ist nicht verfügbar |