BSC080N12LSGATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Technische Details BSC080N12LSGATMA1 Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8, Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8, Vgs(th) (Max) @ Id: 2.4V @ 112µA, Power Dissipation (Max): 156W (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSC080N12LSGATMA1 nach Preis ab 2.08 EUR bis 5.37 EUR
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BSC080N12LSGATMA1 | Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 4311 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC080N12LSGATMA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TDSON-8 Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 2.4V @ 112µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSC080N12LSGATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
MOSFETs TRENCH >=100V
auf Bestellung 4311 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.37 EUR |
| 10+ | 3.36 EUR |
| 100+ | 2.46 EUR |
| 500+ | 2.08 EUR |
| BSC080N12LSGATMA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TDSON-8
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Description: TRENCH >=100V PG-TDSON-8
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.4V @ 112µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 99A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)