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BSC082N10LSGATMA1

BSC082N10LSGATMA1 Infineon Technologies

BSC082N10LS+Rev1.05.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a6011647faad240719
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13.8A 8TDSON
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2.4V @ 110µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 100A (Tc)
FET Type: N-Channel
auf Bestellung 4960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+5.88 EUR
10+3.84 EUR
100+2.68 EUR
500+2.19 EUR
1000+2.03 EUR
2000+1.97 EUR
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Technische Details BSC082N10LSGATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 13.8A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 100A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 110µA, Supplier Device Package: PG-TDSON-8-1, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V.

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BSC082N10LSGATMA1 BSC082N10LSGATMA1 Infineon Technologies BSC082N10LS+Rev1.05.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a6011647faad240719 Description: MOSFET N-CH 100V 13.8A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 100A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC082N10LSGATMA1 BSC082N10LS+Rev1.05.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a6011647faad240719
BSC082N10LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13.8A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 100A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH