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BSC084P03NS3GATMA1

BSC084P03NS3GATMA1 Infineon Technologies

BSC084P03NS3+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120c83fdcd7326c Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 14.9A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
auf Bestellung 4445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
23+0.77 EUR
100+0.67 EUR
Mindestbestellmenge: 21
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Technische Details BSC084P03NS3GATMA1 Infineon Technologies

Description: MOSFET P-CH 30V 14.9A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 3.1V @ 105µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V.

Weitere Produktangebote BSC084P03NS3GATMA1 nach Preis ab 0.65 EUR bis 1.39 EUR

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BSC084P03NS3GATMA1 BSC084P03NS3GATMA1 Hersteller : Infineon Technologies Infineon_BSC084P03NS3_G_DS_v02_01_en-1731137.pdf MOSFETs P-Ch -30V -78.6A TDSON-8 OptiMOS P3
auf Bestellung 6817 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.39 EUR
10+1.18 EUR
100+0.91 EUR
500+0.77 EUR
1000+0.7 EUR
2500+0.66 EUR
5000+0.65 EUR
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Im Einkaufswagen  Stück im Wert von  UAH
BSC084P03NS3GATMA1 BSC084P03NS3GATMA1 Hersteller : Infineon Technologies BSC084P03NS3+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120c83fdcd7326c Description: MOSFET P-CH 30V 14.9A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
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BSC084P03NS3GATMA1 BSC084P03NS3GATMA1 Hersteller : Infineon Technologies bsc084p03ns3g_2.0.pdf Trans MOSFET P-CH 30V 14.9A Automotive 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
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BSC084P03NS3GATMA1 Hersteller : INFINEON TECHNOLOGIES BSC084P03NS3+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120c83fdcd7326c BSC084P03NS3GATMA1 SMD P channel transistors
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