
BSC084P03NS3GATMA1 Infineon Technologies

Description: MOSFET P-CH 30V 14.9A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
auf Bestellung 4507 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
17+ | 1.09 EUR |
19+ | 0.93 EUR |
100+ | 0.76 EUR |
500+ | 0.68 EUR |
1000+ | 0.67 EUR |
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Technische Details BSC084P03NS3GATMA1 Infineon Technologies
Description: MOSFET P-CH 30V 14.9A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 3.1V @ 105µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V.
Weitere Produktangebote BSC084P03NS3GATMA1 nach Preis ab 0.65 EUR bis 1.39 EUR
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BSC084P03NS3GATMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 6817 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC084P03NS3GATMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.1V @ 105µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V |
auf Bestellung 2125 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC084P03NS3GATMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC084P03NS3GATMA1 | Hersteller : INFINEON TECHNOLOGIES |
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