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BSC088N15LS5ATMA1

BSC088N15LS5ATMA1 Infineon Technologies

BSC088N15LS5_Rev2.0_12-13-23.pdf Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 107µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V
auf Bestellung 2361 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.1 EUR
10+3.05 EUR
100+2.5 EUR
500+2.12 EUR
1000+2.05 EUR
2000+2.03 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSC088N15LS5ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V, Power Dissipation (Max): 2.5W (Ta), 139W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 107µA, Supplier Device Package: PG-TDSON-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V.

Weitere Produktangebote BSC088N15LS5ATMA1 nach Preis ab 1.99 EUR bis 4.38 EUR

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BSC088N15LS5ATMA1 BSC088N15LS5ATMA1 Hersteller : Infineon Technologies Infineon_BSC088N15LS5_DataSheet_v02_00_EN-3398036.pdf MOSFET TRENCH >=100V
auf Bestellung 1698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.38 EUR
10+3.64 EUR
100+2.9 EUR
250+2.68 EUR
500+2.43 EUR
1000+2.08 EUR
2000+1.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC088N15LS5ATMA1 BSC088N15LS5ATMA1 Hersteller : Infineon Technologies BSC088N15LS5_Rev2.0_12-13-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 107µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V
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Im Einkaufswagen  Stück im Wert von  UAH