BSC0902NSIATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 23A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 10mA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Technische Details BSC0902NSIATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 23A/100A TDSON, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TDSON-8-6, Vgs(th) (Max) @ Id: 2V @ 10mA, Power Dissipation (Max): 2.5W (Ta), 48W (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSC0902NSIATMA1 nach Preis ab 0.41 EUR bis 1.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BSC0902NSIATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC0902NSIATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC0902NSIATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R |
auf Bestellung 9909 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC0902NSIATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R |
auf Bestellung 9909 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC0902NSIATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R |
auf Bestellung 2460 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC0902NSIATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R |
auf Bestellung 1573 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC0902NSIATMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC0902NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 89A Power dissipation: 48W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 4435 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC0902NSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 23A/100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 10mA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V |
auf Bestellung 24263 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSC0902NSIATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.44 EUR |
| 10000+ | 0.42 EUR |
| BSC0902NSIATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.44 EUR |
| 10000+ | 0.41 EUR |
| BSC0902NSIATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
auf Bestellung 9909 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 306+ | 0.48 EUR |
| BSC0902NSIATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
auf Bestellung 9909 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 297+ | 0.49 EUR |
| 303+ | 0.43 EUR |
| 306+ | 0.41 EUR |
| BSC0902NSIATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
auf Bestellung 2460 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 941+ | 0.58 EUR |
| 1020+ | 0.53 EUR |
| BSC0902NSIATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
auf Bestellung 1573 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 941+ | 0.58 EUR |
| 1020+ | 0.53 EUR |
| BSC0902NSIATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.68 EUR |
| BSC0902NSIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 4435 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 91+ | 0.79 EUR |
| 101+ | 0.71 EUR |
| 104+ | 0.69 EUR |
| BSC0902NSIATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10mA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 24263 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.81 EUR |
| 16+ | 1.14 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.53 EUR |
| 2000+ | 0.48 EUR |